Product Summary

The NAND02GW3B2CN6E Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The devices range from 1 Gbit to 2 Gbits and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 2112 Bytes (2048 + 64 spare) or 1056 Words (1024 + 32 spare) depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC). The devices feature a Write Protect pin that allows performing hardware protection against program and erase operations. The devices feature an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor. A Copy Back Program command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed.

Parametrics

Absolute maximum ratings:(1)Temperature Under Bias, TBIAS: 闁?0 to 125閹虹煰; (2)Storage Temperature, TSTG: 闁?5 to 150閹虹煰; (3)Input or Output Voltage, VIO, 1.8V devices: 闁?.6 to 2.7V; (4)Input or Output Voltage, VIO, 3V devices: 闁?.6 to 4.6V; (5)Supply Voltage, VDD, 1.8V devices: 闁?.6 to 2.7V; (6)Supply Voltage, VDD, 3V devices: 闁?.6 to 4.6V.

Features

Features: (1)High Density NAND Flash memories; (2)NAND interface; (3)Supply voltage: 1.8V/3.0V; (4)Page size; (5)Block size; (6)Page Read/Program; (7)Copy Back Program mode; (8)Cache Program and Cache Read modes; (9)Fast Block Erase: 2ms (typ); (10)Status Register; (11)Electronic Signature; (12)Chip Enable do not care; (13)Serial Number option; (14)Data protection; (15)Data integrity; (16)ECOPACK packages; (17)Development tools.

Diagrams

<IMG src="http://www.seekic.com/uploadfile/ic-mfg/201132222157595.jpg" border=0>

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NAND02GW3B2CN6E
NAND02GW3B2CN6E

STMicroelectronics

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NAND R
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