Product Summary

The KMA6D5P20Q is P-CH trench MOSFET. The drain-source voltage is -20V, and hte gate-source voltage is ±12V. It is usually used in battery packs and battery-powered portable equipment applications. It’s mainly suitable for use as a load switch in battery powered applications and protection in battery packs.

Parametrics

Absolute maximum ratings:(1)Drain-Source Voltage, VDSS: -20V; (2)Gate-Source Voltage, VGSS: ±12V; (3)Drain Current, DC ID: -6.5A; (4)Drain Current, Pulsed IDP: -32A; (5)Drain Power Dissipation, Ta=25℃, PD: 2.5W; (6)Drain Power Dissipation, Ta=100℃, PD: 1.0W; (7)Maximum Junction Temperature, Tj: 150℃; (8)Storage Temperature Range, Tstg: -55 to 150℃; (9)Thermal Resistance, Junction to Ambient, RthJA: 50 ℃/W.

Features

Features:(1)VDSS=-20V, ID=-6.5A; (2)Drain-Source ON Resistance: RDS(ON)=35m (Max.) @ VGS=-4.5V; (3)Drain-Source ON Resistance: RDS(ON)=60m (Max.) @ VGS=-2.5V.

Diagrams